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CEB20N06 数据表(PDF) 3 Page - Chino-Excel Technology |
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CEB20N06 数据表(HTML) 3 Page - Chino-Excel Technology |
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3 / 4 page ![]() CEP20N06/CEB20N06 4 - 60 Ciss Coss Crss 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=10V I D=20A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 0.4 0.6 0.8 1.0 10 1 10 0 10 2 1.4 1.2 V GS=0V 0 1 2 3 4 5 0 5 10 15 20 25 V GS=4V V GS=3V V GS=10,8,6,5V 40 30 20 10 0 0 1 2 3 50 4 5 6 T J=125 C -55 C 25 C |
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