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CEP20P06 数据表(PDF) 3 Page - Chino-Excel Technology |
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CEP20P06 数据表(HTML) 3 Page - Chino-Excel Technology |
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3 / 4 page ![]() CEP20P06/CEB20P06 4 - 64 Ciss Coss Crss 1200 1000 800 600 400 200 0 0 6 12 18 24 30 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=-10V I D=-9A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.4 1.2 V GS=0V 15 12 9 6 3 0 2.0 3.0 4.0 5.0 2.5 3.5 4.5 T J=125 C -55 C 25 C 0.0 0.5 1.0 1.5 2.0 0 4 8 12 16 20 -V GS=10,9,8,7,6,5V -V GS=3V -V GS=4V |
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