CEB70N06 datasheet(2/4 Pages) CET

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CEP70N06/CEB70N06

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forwand Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

-100

100

Ω

4 - 143

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Typ

Max

VDS = 58V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 50A

VDS = 25V, ID = 50A

VDD = 30V, ID = 50A,

VGS = 10V, RGEN = 3.6Ω

VDS = 48V, ID = 50A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 50A

2384

567

19.3

9.7

41.8

8.4

50.7

10.7

19.1

1.3

20.7

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 260

µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C

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