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IRG4PC50UD 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IRG4PC50UD
功能描述  IGBT
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IRG4PC50UD 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRG4PC50UD Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRG4PC50UD Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRG4PC50UD Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2015
eq IRG4PC50UD
IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.64
℃
/W
Rth j-c
Thermal Resistance,Junction to Case Diode
0.83
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.25mA
600
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC=0.25mA
3.0
--
6.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=27A; VCE= 15V,
TJ=25℃
1.65
2.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 27A; VCE= 15V,
TJ=150℃
1.6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 55A; VCE= 15V,
TJ= 25℃
2.0
V
ICES
Zero Gate Voltage Collector Current
VCE= 600V; VGE=0
250
uA
ICES
Zero Gate Voltage Collector Current
VCE= 600V; VGE=0
TJ=150℃
6500
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
VFM
Diode Forward Voltage Drop
IC= 25A
1.3
1.7
V
VFM
Diode Forward Voltage Drop
IC= 25A
TJ=150℃
1.2
1.5
V
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
4000
--
pF
Coes
Output Capacitance
--
250
--
Cres
Reverse Transfer Capacitance
--
52
--
Qg
Total Gate Charge
VGE = 15V,
IC= 27A,
VCE = 400V
--
180
--
nC
Qgs
Gate-Source Charge
--
25
--
Qgd
Gate-Drain Charge
--
61
--



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