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ISCF8011 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCF8011
功能描述  SiC N-Channel MOSFET
PDF  8 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8011 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8011 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 7Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 8Page - Inchange Semiconductor Company Limited  
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ISCF8011
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.23
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID =22mA
2
3
4
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID=50A
--
16
22
mΩ
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID=50A
Tj=150℃
--
25.2
--
mΩ
IGSS
Gate Source Leakage Current
VGS= -10to20V; VDS= 0V
--
10
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V
--
5
100
μA
gfS
Forward Transconductance
VDS= 20V; ID=50A
--
51
--
S
EOSS
COSS Stored Energy
VDS= 1000V;f = 1.0MHz
--
141
--
μJ
RG
Internal Gate Resistance
VAC= 25mV;f = 1.0MHz
--
35
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
VAC=25mV
--
6378
--
pF
Coss
Output Capacitance
--
245
--
Crss
Reverse Transfer Capacitance
--
15
--
Qg
Total Gate Charge
VDD=800V,
ID= 50A,
VGS= - 5to +20V,
--
238
--
nC
Qgs
Gate-Source Charge
--
76.7
--
Qgd
Gate-Drain Charge
--
78.3
--



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