IXFN170N30P datasheet(1/3 Pages) ISC

部件名	IXFN170N30P

功能描述	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

ISFM1025

eq IXFN170N30P

N-Channel MOSFET

www.iscsemi.com

1

DESCRIPTION

·

Drain Current -ID= 138A@ TC=25℃

·

Drain Source Voltage

-VDSS= 300V(Min)

·

Static Drain-Source On-Resistance

-RDS(on) = 18Ω(Max)@VGS= 10V

APPLICATIONS

·

DC-DC converter

·

Battery Chargers

·

High speed power switch

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

300

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-continuous@ TC=25℃

138

A

IDM

Pulse Drain Current

500

A

PD

Total Dissipation@TC=25℃

890

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

D

G

S

SOT-227 package

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