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LMC660AI 数据表(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LMC660AI
功能描述  CMOS Quad Operational Amplifier
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LMC660AI 数据表(HTML) 4 Page - National Semiconductor (TI)

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AC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J = 25˚C. Boldface limits apply at the temperature extremes. V
+ =
5V, V
= 0V, V
CM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC660AI
LMC660C
Units
Limit
Limit
(Note 4)
(Note 4)
Total Harmonic Distortion
F = 10 kHz,
A
V = −10
R
L =2 kΩ,
V
O =8 VPP
V
+ = 15V
0.01
%
Note 1: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of ±30 mA over long term may adversely affect reliability.
Note 2: The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =(TJ(max)
−TA)/θJA.
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4: Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.
Note 5: V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.
Note 6: V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7: Input referred. V+ = 15V and RL =10 kΩ connected to V
+/2. Each amp excited in turn with 1 kHz to produce V
O =13 VPP.
Note 8: Human body model, 1.5 k
Ω in series with 100 pF.
Note 9: A military RETS electrical test specification is available on request. At the time of printing, the LMC660AMJ/883 RETS spec complied fully with the boldface
limits in this column. The LMC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 10: For operating at elevated temperatures the device must be derated based on the thermal resistance
θJA with PD =(TJ −TA)/θJA.
Note 11: All numbers apply for packages soldered directly into a PC board.
Note 12: Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected.
Typical Performance Characteristics V
S = ±7.5V, TA = 25˚C unless otherwise specified
Supply Current
vs Supply Voltage
DS008767-24
Offset Voltage
DS008767-25
Input Bias Current
DS008767-26
Output Characteristics
Current Sinking
DS008767-27
Output Characteristics
Current Sourcing
DS008767-28
Input Voltage Noise
vs Frequency
DS008767-29
www.national.com
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