High Power GaAs SPDT Switch

DC - 3.0 GHz

SW-276

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product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

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whatsoever arising out of the use or application of any product(s) or

information.

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Visit www.macom.com for additional data sheets and product information.

V3

2

RoHS

Compliant

7,8

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

DC - 3.0 GHz

dB

dB

dB

dB

—

—

—

—

0.4

0.5

0.7

0.9

0.5

0.65

0.8

1.0

Isolation

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

DC - 3.0 GHz

dB

dB

dB

dB

37

31

24

19

—

—

—

—

—

—

—

—

VSWR

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

DC - 3.0 GHz

Ratio

Ratio

Ratio

Ratio

—

—

—

—

—

—

—

—

1.3:1

1.5:1

1.5:1

1.6:1

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

30

—

Ton, Toff

50% control to 90% RF, and 50% control to 10% RF

nS

—

35

—

Transients

In Band

mV

—

12

—

Input Power for P0.1dB

0.9 GHz (-5 V Control)

0.9 GHz (-8 V Control)

dBm

dBm

—

—

32

35

—

—

Third Order Intercept Point

Two +10 dBm Input tones

0.9 GHz (-5 V Control)

0.9 GHz (-8 V Control)

dBm

dBm

—

—

61

65

—

—

Input Power for P1dB

0.9 GHz (-5 V Control)

0.9 GHz (-8 V Control)

dBm

dBm

—

—

35

39

—

—

ports, unless otherwise specified.

8. High power (greater than 1W) handling specifications apply to cold switching only. For input powers under 1W hot switching can be used.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Truth Table

9

Condition of Switch,

RF Common to each

RF Port

A

B

RF1

RF2

1

0

On

Off

0

1

Off

On

Control

9. 0 = Low = 0 to -0.2 V @ 20 µA max.,

1 = High = -5 V @ 50 µA typ. to -10 V @ 800 µA max.