2SA949 datasheet(1/2 Pages) ISC

部件名	2SA949

功能描述	isc Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2SA949

isc Silicon PNP Power Transistor

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

-V(BR)CEO=-150V(Min)

·

Collector-Emitter Saturation Voltage

-VCE(sat)= -0.8V(Max) @IC= -10mA

APPLICATIONS

·

Designed for power amplifier,high speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-50

mA

IB

Base Current

-5

mA

PC

Collector Power Dissipation

TC=25℃

800

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SA949

制造商	部件名	数据表	功能描述
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