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F-3

NJ01 Process

Silicon Junction Field-Effect Transistor

Gate Source Voltage in Volts

Input Capacitance as a Function of VGS

Gate Source Voltage in Volts

0.1

1

10

20

Feedback Capacitance as a Function of VGS

Gate Source Cutoff Voltage in Volts

0

– 1– 2– 3– 4– 5– 6

Drain Saturation Current as a Function of VGS(OFF)

200

400

600

800

0

– 1– 2– 3– 4– 5– 6

0

25

50

75

100

125

150

250

200

150

100

50

250

200

150

100

50

10k

1k

100

10

0.1

1.0

Ambient Temperature

°C

Leakage Current as a Function of Temperature

Drain to Source Voltage in Volts

0

5

10

15

20

Drain Current as a Function of VDS

Gate Source Cutoff Voltage in Volts

Gfs as a Function of VGS(OFF)

0.1

1

10

20

VDS = Ø V

VDS = 10 V

VDS = Ø V

VDS = 10 V

2.0

1.5

1.0

0.5

4

3

2

1

VGS = –2.0 V

VGS = –1.5 V

VGS = –1.0 V

VGS = –0.5 V

VGS = Ø V

VGS(OFF) = Ð2.1 V

Databook.fxp

1/13/99 2:09 PM

Page F-3