GSMBRTL20120 datasheet(1/2 Pages) ISC

部件名	GSMBRTL20120

功能描述	Schottky Barrier Rectifier

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Schottky Barrier Rectifier

GSMBRTL20120

www.iscsemi.com

2023-8-18

1

FEATURES

·Multi-layer Metal -Silicon Potential Structure

·Low Leakage Current

·High Current Capability, High Efficiency

·High Junction Temperature Capability

MECHANICAL CHARACTERISTICS

·Low Voltage High Frequency Switching Power Supply

·Low Voltage High Frequency Invers Circuit

·Low Voltage Continued Circuit and Protection Circuit

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRMS

VR

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

120

V

IF(AV)

Average Rectified Forward Current

Per Device

20

A

IF(AV)

Average Rectified Forward Current

Per Diode

10

A

IFSM

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed on rated load

conditions

120

A

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

类似零件编号 - GSMBRTL20120

制造商	部件名	数据表	功能描述
GTM CORPORATION	GSMBD2004	223Kb / 2P	SURFACE MOUNT, SWITCHING DIODE
E-Tech Electronics LTD	GSMBD2004	227Kb / 2P	S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
GTM CORPORATION	GSMBD4148	279Kb / 2P	SURFACE MOUNT, SWITCHING DIODE
E-Tech Electronics LTD	GSMBD4148	283Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 7 5 V, C U R R E N T 0 . 2 A
GTM CORPORATION	GSMBT1015	152Kb / 2P	PNP EPITAXIAL PLANAR TRANSISTOR

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