1

P-Channel 30 V (D-S) MOSFET

FEATURES

•TrenchFET® Power MOSFET

•

100 % Rg Tested

APPLICATIONS

• For Mobile Computing

- Load Switch

- Notebook Adaptor Switch

- DC/DC Converter

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Typ.

ID (A)

a

Qg (Typ.)

- 30

0.0

46 at V

GS = - 10 V

-

5.6

11.4 nC

0.04

9 at V

GS = - 6 V

-

5

0.05

4 at V

GS = - 4.5 V

-

4.5

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-

5.6

A

TC = 70 °C

-

5.1

TA = 25 °C

- 5.4b,c

TA = 70 °C

- 4.3b,c

Pulsed Drain Current (t = 100 µs)

IDM

- 18

Continous Source-Drain Diode Current

TC = 25 °C

IS

- 2.1

TA = 25 °C

- 1b,c

Maximum Power Dissipation

TC = 25 °C

PD

2.5

W

TC = 70 °C

1.6

TA = 25 °C

1.25b,c

TA = 70 °C

0.8b,c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb,d

t

 5 s

RthJA

75

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

UT2311G-AE3-R

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