P-Channel 20-V (D-S) MOSFET

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

- 20

0.035 at VGS = - 10 V

- 5 e

10 nC

0.043 at VGS = - 4.5 V

- 5 e

0.061 at VGS = - 2.5 V

- 4.8

G

TO-236

(SOT-23)

S

D

2

3

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Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 5e

A

TC = 70 °C

- 4.8

TA = 25 °C

- 4.5b, c

TA = 70 °C

- 3.5b, c

Pulsed Drain Current

IDM

- 18

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 2.1

TA = 25 °C

- 1.0b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.5

W

TC = 70 °C

1.6

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

5 s

RthJA

75

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

PA Switch

•

DC/DC Converters

UT2340L-AE3-R

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