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UD052012L-AF5-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UD052012L-AF5-R
功能描述  HIGH EFFICIENCY 1MHz 2A SYNCHRONOUS STEP DOWN CONVERTER
PDF  9 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UD052012L-AF5-R 数据表(HTML) 4 Page - Unisonic Technologies

  UD052012L-AF5-R Datasheet HTML 1Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 2Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 3Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 4Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 5Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 6Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 7Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 8Page - Unisonic Technologies UD052012L-AF5-R Datasheet HTML 9Page - Unisonic Technologies  
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UD052012
Advance
LINEAR INTEGRATED CIRCUIT
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R115-039.a
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
VIN to GND
-0.3 ~ +6.5
V
LX to GND
-0.3 ~ VIN +0.3
V
EN, FB, PG to GND
-0.3 ~ VIN
V
Maximum Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VIN
+2.5 ~ +6
V
Junction Temperature Range
-40 ~ +125
°C
Operation Temperature Range
TOPR
-40 ~ +85
°C
Note: The device is not guaranteed to function outside its operating conditions.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
250
°C/W
Junction to Case
SOT-25
θJC
130
°C/W
SOT-26
110
°C/W
ELECTRICAL CHARACTERISTICS VIN=5V, TA=25°C, unless otherwise specified.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Supply Voltage
VIN
2.5
6.0
V
Input Over Voltage Protection
VIN OVP
6.5
V
Shutdown Current
ISHDN
EN=GND
0.1
1
μA
Quiescent Current
Iq
VFB=0.65V, IOUT=0A
40
μA
Reference Voltage
VREF
0.588
0.6
0.612
V
FB Input Leakage Current
IFB
VFB=VIN
0.01
1
µA
On-Resistance (Note)
RDS(ON)
P-Channel MOSFET
140
mΩ
N-Channel MOSFET
90
mΩ
P-Channel Current Limit (Note)
ILIM
2.2
2.7
A
EN High-Level Input Voltage
VEN(H)
1.5
V
EN Low-Level Input Voltage
VEN(L)
0.4
V
Under Voltage Lockout Voltage
UVLO
2.4
V
UVLO Hysteresis
VHYS
0.2
V
Oscillation Frequency
FOSC
IOUT=300mA
0.8
1.0
1.2
MHz
Minimum On Time
50
ns
Maximum Duty Cycle
100
%
PG Rising Threshold
VPG (H)
VFB Rising
90
%
PG Low Threshold
VPG (L)
VFB falling
85
%
PG Sink Current
IPG
VPG=0.1V
1
mA
Internal Soft-Start Time
TSS
1
ms
VOUT Discharge Resistance
100
Thermal Shutdown Temperature (Note)
150
°C
Note: Guarantee by design.



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