HCS80R670S datasheet(1/2 Pages) ISC

部件名	HCS80R670S

功能描述	N-Channel MOSFET

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

ISF1050

eq HCS80R670S

N-Channel MOSFET

www.iscsemi.com

1

FEATURES

·Drain Current -ID= 8A@ TC=25℃

·Drain Source Voltage -VDSS= 800V(Min)

·Static Drain-Source On-Resistance

-RDS(on) = 0.67Ω(Max)@VGS= 10V

APPLICATIONS

·

Switch Mode Power Supply (SMPS)

·

Uninterruptible Power Supply (UPS)

·

Power Factor Correction (PFC)

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

8

A

IDM

Drain Current-Single Pluse

24

A

PD

Total Dissipation @TC=25℃

29

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

4.31

℃

/W

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