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ISB3021 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISB3021
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISB3021 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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eq ISB3021
isc Silicon NPN Power Transistor
www.iscsemi.com
2023-9-12
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO=600V(Min)
·
Collector-Emitter Saturation Voltage
-VCE(sat)= 1.5V(Max) @IC=6A
APPLICATIONS
·
Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
PC
Collector Power Dissipation
TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W


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