UT6402L-AE3-R datasheet(1/9 Pages) VBSEMI

部件名	UT6402L-AE3-R

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0

30 at V

GS = 10 V

6.5

4.5 nC

0.0

33 at V

GS = 4.5 V

6.0

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

N-Channel MOSFET

G

D

S

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6.5a

A

TC = 70 °C

6.0

TA = 25 °C

5.3

TA = 70 °C

5.0

Pulsed Drain Current

IDM

25

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.4

TA = 25 °C

0.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.7

W

TC = 70 °C

1.1

TA = 25 °C

1.1b, c

TA = 70 °C

0.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

90

115

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

UT6402L-AE3-R

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