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UTR4502L-AE3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UTR4502L-AE3-R
功能描述  P-Channel 30 V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UTR4502L-AE3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UTR4502L-AE3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UTR4502L-AE3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS - Drain-to-Source Voltage (V)
V
GS = 4 V
V
GS = 4.5 V
V
GS = 10 V thru 5 V
V
GS = 3 V
0
0.0
0.04
0.06
0.08
0
10
20
30
40
50
I
D - Drain Current (A)
V
GS = 4.5 V
V
GS = 6 V
V
GS = 10 V
0
2
4
6
8
10
0
5
10
15
20
25
Q
g - Total Gate Charge (nC)
V
DS = 24 V
V
DS = 15 V
V
DS = 8 V
I
D = 5.4 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0.5
1
1.5
2
0
0.6
1.2
1.8
2.4
3
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = 125 °C
T
C = - 55 °C
0
450
900
1350
1800
0
6
12
18
24
30
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
I
D = 5.4 A
V
GS = 10 V, 6 V
V
GS = 4.5 V
UTR4502L-AE3-R
www.VBsemi.com
2
服务热线：400-655-8788



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