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MMBT4401 数据表(PDF) 2 Page - Diodes Incorporated

部件名 MMBT4401
功能描述  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

MMBT4401 数据表(HTML) 2 Page - Diodes Incorporated

  MMBT4401 Datasheet HTML 1Page - Diodes Incorporated MMBT4401 Datasheet HTML 2Page - Diodes Incorporated MMBT4401 Datasheet HTML 3Page - Diodes Incorporated MMBT4401 Datasheet HTML 4Page - Diodes Incorporated  
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Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICEX
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current
IBL
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.40
0.75
V
IC = 150mA, IB = 15mA
B
IC = 500mA, IB
B
= 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
⎯
0.95
1.2
V
IC = 150mA, IB = 15mA
B
IC = 500mA, IB
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
⎯
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
k
Ω
Voltage Feedback Ratio
hre
0.1
8.0
x 10
-4
Small Signal Current Gain
hfe
40
500
⎯
Output Admittance
hoe
1.0
30
μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Notes:
3. Short duration pulse test used to minimize self-heating effect.
0
50
100
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs
Ambient Temperature
A
150
200
250
300
350
0
1
10
1000
100
0.1
1
10
1000
100
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
C
T= -25°C
A
T= +25°C
A
T = 125°C
A
V= 1.0V
CE
DS30039 Rev. 9 - 2
2 of 4
www.diodes.com
MMBT4401
© Diodes Incorporated



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