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MSCSM120AM31CT1 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 MSCSM120AM31CT1
功能描述  All-SiC Power Module
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

MSCSM120AM31CT1 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  MSCSM120AM31CT1 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MSCSM120AM31CT1 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MSCSM120AM31CT1 Datasheet HTML 3Page - Inchange Semiconductor Company Limited MSCSM120AM31CT1 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCFM8018
eq MSCSM120AM31CT1
All-SiC Power Module
www.iscsemi.com
2023-9-2
2
MOSFET ChaRACTERISTICS (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 20mA
1.9
2.5
4.0
V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 20mA;TJ=175°C
--
1.8
--
V
RDS(on)
Drain-Source On-stage Resistance
VGS= 20V; ID=80A
--
22
--
mΩ
VGS= 20V; ID= 80A;TJ=175°C
--
41
--
IGSS
Gate Source Leakage Current
VGS= -10V/+25V; VDS= 0V
--
2
200
uA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V, VGS = 0V
--
20
500
mA
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1MHz
VAC=25mV
--
5890
--
pF
Coss
Output Capacitance
--
335
--
Crss
Reverse Transfer Capacitance
--
14
--
Qg
Total Gate Charge
VDS = 800V,
ID=80A,
VGS=-5V/ +20V
--
75
--
nC
Qgs
Gate-Source Charge
--
38
--
Qgd
Gate-Drain Charge
--
285
--
td(on)
Turn-on Delay Time
VGS=-5/+20V,
ID= 80A,
VDS=600V,
Rg=2.5Ω,
Inductive Load
--
30
--
ns
tr
Turn-on Rise Time
--
30
--
td(off)
Turn-off Delay Time
--
50
--
tf
Turn-off Fall Time
--
25
--
Eon
Turn-On Switching Energy
--
1.0
--
mJ
Eoff
Turn-Off Switching Energy
--
0.7
--
VSD
Diode Forward Voltage
ISD= 40A
--
4.5
--
V
ISD= 40A;TJ=175°C
--
4.2
--



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