STTH6012 datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STTH6012

4/8

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I=I

F(AV)

I =0.5 x I

F(AV)

V =600V

T =125°C

I =2 x I

F(AV)

Figure 5.

Reverse recovery time versus

dIF/dt (typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

200

300

400

500

600

700

800

900

1000

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =600V

T =125°C

100

150

200

250

300

350

400

450

500

Q (µC)

I =2 x I

F(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

V =600V

T =125°C

dI /dt(A/µs)

Figure 7.

Softness factor versus dIF/dt

(typical values)

Figure 8.

Relative variations of dynamic

parameters versus junction

temperature

0.50

0.75

1.00

1.25

1.50

1.75

2.00

100

150

200

250

300

350

400

450

500

S factor

2xI

T =125°C

F(AV)

≤

V =600V

dI /dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

F(AV)

V =600V

trr

STTH6012 数据表(PDF) 4 Page - STMicroelectronics

STTH6012 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

STTH6012 数据表(PDF) 4 Page - STMicroelectronics

STTH6012 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载