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STTH9012TV 数据表(PDF) 2 Page - STMicroelectronics |
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STTH9012TV 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STTH9012TV 2/8 1 Characteristics When the diodes are used simultaneously: ∆T j(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) To evaluate the conduction losses use the following equation: P = 1.40 x IF(AV) + 0.0089 IF 2 (RMS) Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V IF(RMS) RMS forward current 150 A IF(AV) Average forward current, δ = 0.5 Tc = 75° C per diode 45 A IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 600 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 420 A Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature 150 °C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 0.74 °C/W Total 0.42 Rth(c) Coupling thermal resistance 0.1 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 30 µA Tj = 125° C 30 300 VF (2) Forward voltage drop Tj = 25° C IF = 45 A 2.10 V Tj = 125° C 1.25 1.90 Tj = 150° C 1.20 1.80 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % |
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