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STGP30M65DF2 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 STGP30M65DF2
功能描述  Trench gate Field-Stop IGBT
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

STGP30M65DF2 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  STGP30M65DF2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STGP30M65DF2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STGP30M65DF2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited STGP30M65DF2 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2018
eq STGP30M65DF2
Trench gate Field-Stop IGBT
www.iscsemi.com
2023-10-09
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.58
℃
/W
Rth j-c
Thermal Resistance,Junction to Case diode
1.47
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.25mA
650
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC=0.5mA
5
6
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 30A; VCE= 15V,
TC=25℃
--
1.55
2.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 30A; VCE= 15V,
TC=125℃
--
1.95
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=30A; VCE= 15V,
TC=175℃
--
2.1
--
V
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
--
--
25
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
250
uA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
2490
--
pF
Coes
Output Capacitance
--
143
--
Cres
Reverse Transfer Capacitance
--
46
--
Qg
Total Gate Charge
VGE = 15V,
IC= 30A,
VCE = 520V
--
80
--
nC
Qgs
Gate-Source Charge
--
18
--
Qgd
Gate-Drain Charge
--
32
--



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