ISTM4008 datasheet(2/3 Pages) ISC

2 / 3 page

ISTM4008

eq T880N12TOFXPSA1

Thyristor

www.iscsemi.com

2023-9-13

IGT

gate trigger current

Tvj =25℃; vD = 12V

max. 250

VGT

gate trigger voltage

Tvj =25℃; vD = 12V

max.2.2

IDD; IRD

forward off-state and reverse current

Tvj = Tvj max ; VRD=VRRM; VDD=VDRM

max. 4

tgd

gate controlled delay time

Tvj =25℃; IG=1A; diG /dt=1Aus

max. 4

holding current

Tvj =25℃;VD = 12V

max. 300

latching current

Tvj =25℃;VD = 12V

RGK ≥ 10 Ω iGM = 1 A, diG/dt = 1 A/µs,

tg = 20 µs

max. 1500

tgr

circuit commutated turn-off time

Tvj = Tvj max, iTM = ITAVMvRM = 100

V, vDM = 0,67 VDRMdvD/dt = 20 V/µs,

-diT/dt = 10 A/µs

Typ 250

Rth(j-c)

thermal resistance, junction to case

beidseitig / two-sided, θ = 180°sin

max.0.023

K/W

Rth(c-a)

thermal resistance, case to heatsink

beidseitig / two-sides

max.0.005

K/W

Tvj

maximum junction temperature

125

℃

Tcop

operating temperature

-40 ... +125

℃

Tstg

storage temperature

-40 ... +150

℃

Installation pressure

max.27

weight

max.443

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