AM29F400B datasheet(41/43 Pages) AMD

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November 1, 2006 21505E5

Am29F400B

D A TA

SH EE T

REVISION SUMMARY

Revision A (August 1997)

Initial release.

Revision B (October 1997)

Global

Added -55 and -60 speed options, deleted -65 speed

option. Changed data sheet designation from Advance

Information to Preliminary.

Connection Diagrams

Corrected pinouts on all packages: deleted A18.

Table 1, Device Bus Operations

Revised to indicate inputs for both CE# and RESET#

are required for standby mode.

Sector Protection/Unprotection

Corrected text to indicate that these functions can only

be implemented using programming equipment.

Program Command Sequence

Changed to indicate Data# Polling is active for 2 µs

after a program command sequence if the sector spec-

ified is protected.

Sector Erase Command Sequence and DQ3: Sector

Erase Timer

Corrected sector erase timeout to 50 µs.

Erase Suspend Command

Changed to indicate that the device suspends the

erase operation a maximum of 20 µs after the rising

edge of WE#.

DC Characteristics

Changed to indicate VID min and max values are 11.5

to 12.5 V,with a VCC test condition of 5.0 V. Revised ILIT

to 50 µA. Added ICC4 specification. Added typical

values to TTL/NMOS table. Revised CMOS typical

standby current (ICC3).

Figure 14: Chip/Sector Erase Operation Timings;

Figure 19: Alternate CE# Controlled Write

Operation TImings

Corrected hexadecimal values in address and data

waveforms.

AC Characteristics, Erase/Program Operations

Corrected tAH specification for -90 speed option to 45

ns.

Erase and Programming Performance

Corrected word and chip programming times.

Revision C (January 1998)

Global

Formatted for consistency with other 5.0 volt-only

data sheets.

AC Characteristics

Changed tDF and TFLQZ to 15 ns for -55 speed option.

Revision C+1 (February 1998)

Table 2, Top Boot Block Sector Address Table

Corrected the sector size for SA10 to 16 Kbytes/

8 Kwords.

DC Characteristics—TTL/NMOS Compatible

Deleted Note 4.

Revision C+2 (April 1998)

Distinctive Characteristics

Changed minimum 100K write/erase cycles guaran-

teed to 1,000,000.

Product Selector Guide, Ordering Information

Added 55 ns ±10% speed option.

AC Characteristics

Word/Byte Configuration: Changed tFHQV specification

for 55 ns device.

Erase/Program Operations: Changed tWHWH1 word

mode specification to 12 µs. Corrected the notes refer-

ence for tWHWH1 and tWHWH2. These parameters are

100% tested. Corrected the note reference for tVCS.

This parameter is not 100% tested.

Changed tDS and tCP specifications for 55 ns device.

Alternate CE# Controlled Erase/Program Operations:

Changed tWHWH1 word mode specification to 12 µs.

Corrected the notes reference for tWHWH1 and tWHWH2.

These parameters are 100% tested.

Changed tDS and tCP specifications for 55 ns device.

Temporary Sector Unprotect Table

Added note reference for tVIDR. This parameter is not

100% tested.

Erase and Programming Performance

Changed minimum 100K program and erase cycles

guaranteed to 1,000,000.

Revision C+3 (June 1998)

Distinctive Characteristics

High Performance: Changed “Access times as fast as

55 ns” to “Access times as fast as 45 ns”.

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