AM29F032B datasheet(11/39 Pages) AMD

11 / 39 page

November 2, 2006 21610D5

Am29F032B

D A TA

SH EE T

contains timing specification tables and timing dia-

grams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system

may check the status of the operation by reading the

status bits on DQ7–DQ0. Standard read cycle timings

and ICC read specifications apply. The Erase Resume

command is valid only during the Erase Suspend

mode.Refer to “Erase Suspend/Erase Resume Com-

mands” on page 15 for more information, and to each

“AC Characteristics” on page 25 section for timing dia-

grams.

Standby Mode

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

The device enters the CMOS standby mode when CE#

and RESET# pins are both held at VCC ± 0.5 V. (Note

that this is a more restricted voltage range than VIH.)

The device enters the TTL standby mode when CE#

and RESET# pins are both held at VIH. The device re-

quires standard access time (tCE) for read access when

the device is in either of these standby modes, before it

is ready to read data.

The device also enters the standby mode when the RE-

SET# pin is driven low. Refer to the next section, “RE-

SET#: Hardware Reset Pin”.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

ICC3 in DC Characteristics tables, represents the

standby current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset-

ting the device to reading array data. When the system

drives the RESET# pin low for at least a period of tRP,

the device immediately terminates any operation in

progress, tristates all data output pins, and ignores all

read/write attempts for the duration of the RESET#

pulse. The device also resets the internal state ma-

chine to reading array data. The operation that was in-

terrupted should be reinitiated once the device is ready

to accept another command sequence, to ensure data

integrity.

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at VIL, the device enters

the TTL standby mode; if RESET# is held at VSS ±

0.5 V, the device enters the CMOS standby mode.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

If RESET# is asserted during a program or erase oper-

ation, the RY/BY# pin remains a “0” (busy) until the in-

ternal reset operation is complete, which requires a

time of tREADY (during Embedded Algorithms). The

system can thus monitor RY/BY# to determine whether

the reset operation is complete. If RESET# is asserted

when a program or erase operation is not executing

(RY/BY# pin is “1”), the reset operation is completed

within a time of tREADY (not during Embedded Algo-

rithms). The system can read data tRH after the RE-

SET# pin returns to VIH.

Refer to the “AC Characteristics” on page 25 tables for

RESET# parameters and timing diagram.

Output Disable Mode

When the OE# input is at VIH, output from the device is

disabled. The output pins are placed in the high imped-

ance state.

AM29F032B 数据表(PDF) 11 Page - Advanced Micro Devices

AM29F032B 数据表(HTML) 11 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39

数据表下载