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AM29LV033C 数据表(PDF) 21 Page - Advanced Micro Devices

部件名 AM29LV033C
功能描述  32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
PDF  49 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV033C 数据表(HTML) 21 Page - Advanced Micro Devices

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22268B5 September 12, 2006
Am29LV033C
19
DA TA
SH EET
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 9, on page 25 defines the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper se-
quence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in “AC
Characteristics” on page 34.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” on page 23 for
more information on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” on page 21 section, next.
See also “Requirements for Reading Array Data” on
page 11 in the “Device Bus Operations” section for
more information. The Read Operations table provides
the read parameters, and Figure 13, on page 34
shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is pro-
tected. Table9, on page25 shows the address and
data requirements. This method is an alternative to
that shown in Table 3, on page 15, which is intended
for PROM programmers and requires VID on address
bit A9.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect com-
mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command se-
quence. A read cycle at address XX00h retrieves the
manufacturer code. A read cycle at address XX01h re-
turns the device code. A read cycle containing a sector
address (SA) and the address 02h returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
Table 4, on page 16 for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
The device programs one byte of data for each pro-
gram operation. The command sequence requires four
bus cycles, and is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically generates the pro-
gram pulses and verifies the programmed cell margin.
Table 9, on page 25 shows the address and data re-
quirements for the byte program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
on page 26 for information on these status bits.



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