AM29PL320DB25WPI datasheet(48/49 Pages) AMD

48 / 49 page

Am29PL320D

June 13, 2005

REVISION SUMMARY

Revision A (March 7, 2001)

Initial release.

Revision B (June 12, 2001)

Global

Added 70R speed option.

Changed data sheet status from Advance Information

to Preliminary.

Distinctive Characteristics

SecSi Sector: Added note to future compatibility.

Power Consumption: Replaced stated maximum val-

ues with typical values.

General Description

Added section on SecSi Sector.

SecSi

™ (Secured Silicon) Sector Flash

Memory Region

Added note to indicate sector size and erase function-

ality for future devices.

DC Characteristics

Added typical values for ICC1–ICC5 to table. Corrected

VIN test condition specification to VCC.

Figure 10, Typical ICC1 vs. Frequency

Changed scale on Y-axis to 4 mA divisions.

Revision B+1 (August 30, 2001)

Autoselect Command Sequence

Modified section to point to appropriate tables for au-

toselect functions.

Accelerated Program Operation

Specified a voltage range for VHH.

Table 13, Command Definitions

Corrected the autoselect device ID command se-

quence. The device ID is read in cycles 4, 5, and 6 of a

single command sequence, not as three separate

command sequences as previously shown. Separated

the word and double word command sequences into

two tables for easier reference.

DC Characteristics

Added VHH parameter to table.

Revision C (October 22, 2002)

Global

Deleted preliminary status from data sheet.

Distinctive Characteristics

Clarified endurance specification from “write cycles” to

“erase cycles.”

SecSi

™ (Secured Silicon) Sector Flash

Memory Region

Added text and figure on SecSi Sector Protect Verify

function.

Command Definitions

Modified first paragraph to indicate device behavior

when incorrect data or commands are written.

DC Characteristics

Changed VIL maximum specification. Changed VCC

test condition for VID parameter.

BGA Ball Capacitance

Added table.

Revision C+1 (July 21, 2003)

Common Flash Interface (CFI)

Changed URL for CFI publications.

Command Definitions

Added the phrase “in the improper sequence” to cau-

tionary text in first paragraph.

Erase and Programming Performance

Changed typical sector erase time and typical chip

erase time. Added typical and maximum sector erase

times pertaining to 8 and 16 Kword sectors.

Revision C+2 (October 2, 2003)

Erase Suspend/Erase Resume Commands

Modified text to “Note that unlock bypass programming

is not allowed when the device is erase-suspended” in

the third paragraph.

AC Characteristics - Double Word/Word

Configuration (WORD#) diagram

Modified all instances of DQ14 to DQ30, DQ7 to

DQ15, and DQ15 to DQ31.

Revision C+3 (June 13, 2005)

Cover Page / Title Page

Added Spansion EOL cover page and added EOL

disclaimer to title page.

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