SUPPLEMENT

Publication# 26244

Rev: A Amendment/+1

Issue Date: June 11, 2002

Am29F016D Known Good Die

16 Megabit (2 M x 8-Bit)

CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V

± 10%, single power supply operation

— Minimizes system level power requirements

■ Manufactured on 0.23 µm process technology

■ High performance

— 120 ns access time

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

—<1

µA typical standby current (standard access

time to active mode)

■ Flexible sector architecture

— 32 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

— Group sector protection:

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

■ Minimum 1 million erase cycles guaranteed

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply Flash standard

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase cycle completion

■ Ready/Busy output (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

■ Erase Suspend/Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

■ Hardware reset pin (RESET#)

— Resets internal state machine to the read mode

■ Tested to datasheet specifications at

temperature

■ Quality and reliability levels equivalent to

standard packaged components

■ 20-year data retention at 125

°C