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AM29LV640MB100REF 数据表(PDF) 36 Page - Advanced Micro Devices

部件名 AM29LV640MB100REF
功能描述  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
PDF  66 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV640MB100REF 数据表(HTML) 36 Page - Advanced Micro Devices

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34
Am29LV640MT/B
26190C8 February 1, 2007
D A TA
SH EE T
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out. See DQ3: Sector Erase
Timer on page 41. The time-out begins from the rising
e d g e of t h e f i n a l WE# p u l se i n t h e co mm an d
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. See Write Operation Status
on page 38 for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 7 illustrates the algorithm for the erase opera-
tion. See the table, Erase and Program Operations on
page 48 in AC Characteristics for parameters, and Fig-
ure 19 for timing diagrams.
Figure 7.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 12 and Table 13 for erase command
sequence.
2. See DQ3: Sector Erase Timer on page 41 for
information on the sector erase timer.



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