SSTX404S datasheet(1/4 Pages) BURLAND

部件名	SSTX404S

功能描述	SSTX404S NPN General Purpose Amplifier

PDF	4 Pages

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制造商	BURLAND [Burland Technology Solutions]

网页	https://www.burland.com/

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1 / 4 page

Technical Data

Data Sheet N2115, Rev. A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SSTX404S

SSTX404S NPN General Purpose Amplifier

TRANSISTOR(Q1)

Characteristic

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

75

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

0.6

A

DIODE(D1)

Characteristic

Symbol

Limits

Unit

Maximum (peak) Forward Current

IFM

300

mA

Average Forward Current

IO

100

mA

Surge Current (100uS)

IFSM

2

A

COMMON

Characteristic

Symbol

Limits

Unit

Maximum Output (Pin1-Pin3)Voltage

VO

40

V

Power Dissipation

PC

350

mW

Junction Temperature Range

Tj

150

°C

Storage Temperature Range

Tstg

-55~150

°C

Features

Schematic & Pin Configuration

Mechanical Characteristics

Maximum Ratings@TA=25°C unless otherwise specified



Low saturation Voltage(Transistor)

:VCE(sat)=0.3V(Max.);IC=150mA,IB=15mA

Fast Reverse Recovery Time(Diode)



Capable of 350mWatts of Power Dissipation



Operating and Storage Junction Temperatures: -55℃ to 150℃



Surface Mount SOT-23 Package



RoHS compliant / Green EMC



Collector current: IC=0.6A

SOT-23



Case: SOT-23, Molded Plastic



Terminals: Plated leads Solderable per MIL-STD-202,

Method 208



Mounting Position: Any

DIODE(D1)

1. EMITTER/ANODE

2. BASE

3. COLLECTOR/CATHODE

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