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SP0502BAHTG 数据表(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

部件名 SP0502BAHTG
功能描述  300Wattspeakpulsepower(tp =8/20μs)
PDF  4 Pages
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制造商  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
网页  https://www.umw-ic.com/
标志 UMW - Guangdong Youtai Semiconductor Co., Ltd.

SP0502BAHTG 数据表(HTML) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

  SP0502BAHTG Datasheet HTML 1Page - Guangdong Youtai Semiconductor Co., Ltd. SP0502BAHTG Datasheet HTML 2Page - Guangdong Youtai Semiconductor Co., Ltd. SP0502BAHTG Datasheet HTML 3Page - Guangdong Youtai Semiconductor Co., Ltd. SP0502BAHTG Datasheet HTML 4Page - Guangdong Youtai Semiconductor Co., Ltd.  
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Absolute Maximum Rating
Rating
Symbol
Value
Units
Peak Pulse Power ( tp =8/20μs )
PPP
300
Watts
Peak Pulse Current ( tp =8/20μs )(note1)
Ipp
17
A
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
VESD
30
30
kV
Lead SolderingTemperature
TL
260(10seconds)
℃
JunctionTemperature
TJ
-55 to + 125
℃
StorageTemperature
Tstg
-55 to + 125
℃
ElectricalCharacteristics
Parameter
Symbol
Conditions
Min
Typical
Max
Units
Reverse Stand-OffVoltage
VRWM
5
V
Reverse BreakdownVoltage
VBR
IT=1mA
6.0
7.0
8.5
V
Reverse LeakageCurrent
IR
VRWM=5V,T=25℃
0.5
1
μA
Peak PulseCurrent
IPP
tp =8/20μs
17
A
ClampingVoltage
VC
IPP=1
0A,tp=8/20μs
1
5
V
IPP=
17A,tp=8/20μs
16
V
JunctionCapacitance
Cj
VR = 0V, f =1MHz
(pin1、pin2 topin3)
1
50
pF
Electrical Parameters (TA = 25°C unless otherwisenoted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @
IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @
VRWM
VBR
Breakdown Voltage @
IT
IT
Test Current
Note:.
8/20μs pulsewaveform.
I
IF
VC VBR VRWM
IR VF
IT
V
IPP
12
UMW R
www.umw-ic.com
2
UTD Semiconductor Co.,Limited
SP0502BAHTG



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