Publication# 27082

Rev: A Amendment/+7

Issue Date: June 7, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29DL640H

64 Megabit (8 M x 8-Bit/4 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

— Read may occur in any of the three banks not being

written or erased.

— Four banks may be grouped by customer to achieve

desired bank divisions.

■ Boot Sectors

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

■ Manufactured on 0.13 µm process technology

■ Secured Silicon Sector: Extra 256 Byte sector

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

— Customer lockable: One-time programmable only.

Once locked, data cannot be changed

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero.

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

PACKAGE OPTIONS

■ 63-ball Fine Pitch BGA

■ 48-pin TSOP

PERFORMANCE CHARACTERISTICS

■ High performance

— Access time as fast as 55 ns

— Program time: 4 µs/word typical using accelerated

programming function

■ Ultra low power consumption (typical values)

— 2 mA active read current at 1 MHz

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Minimum 1 million erase cycles guaranteed per

sector

■ 20 year data retention at 125°C

— Reliable operation for the life of the system

SOFTWARE FEATURES

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

— Suspends erase operations to read data from, or

program data to, a sector that is not being erased,

then resumes the erase operation.

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

■ WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

— Acceleration (ACC) function accelerates program

timing

■ Sector protection

— Hardware method to prevent any program or erase

operation within a sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

This product has been retired and is not recommended for designs. For new and current designs, S29JL064H (for TSOP packages) and S29PL064J (for FBGA packages) supersede

AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained

for reference and historical purposes only.