M49000000P datasheet(39/64 Pages) AMD

部件名	M49000000P

功能描述	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)

PDF	64 Pages

Scroll/Zoom	100%

制造商	AMD [Advanced Micro Devices]

网页	http://www.amd.com

标志

39 / 64 page

Am49DL32xBG

July 19, 2002

P R E L I M I NARY

pSRAM DC & OPERATING CHARACTERISTICS

Notes:

1. V

CC – 1.0 V for a 10 ns pulse width.

2. V

CC + 1.0 V for a 10 ns pulse width.

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

Input Leakage Current

IN = VSS to VCC

–1.0

1.0

µA

Output Leakage Current

CE1#s = V

IH, CE2s = VIL or OE# = VIH or

WE# = V

IL, VIO= VSS to VCC

–1.0

1.0

µA

CC1s

Operating Current

Cycle time = Min., I

IO = 0 mA, 100% duty,

CE1#s = V

IL, CE2s = VIH, VIN = VIL = or VIH,

RC = Min.

CC2s

Page Access Operating

Current

Cycle time = Min., I

IO = 0 mA, 100% duty,

CE1#s = V

IL, CE2s = VIH, VIN = VIL = or VIH,

PC = Min.

Output Low Voltage

OL = 1.0 mA

0.4

Output High Voltage

OH = –0.5 mA

Standby Current (CMOS)

CE#1 = V

CCS – 0.2 V, CE2 = VCCS – 0.2 V

µA

DSB

Deep Power-down Standby

CE2 = 0.2 V

µA

Input Low Voltage

–0.3

(Note 1)

0.4

Input High Voltage

2.4

CC +

0.3

(Note 2)

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