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DSA60C60PB 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSA60C60PB 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Diode DSA60C60PB www.iscsemi.com 1 FEATURES · Improved thermal behaviour · High reliability circuit operation · Low voltage peaks for reduced protection circuits · Low noise switching Applications · Rectifiers in switch mode power supplies (SMPS) · Free wheeling diode in low voltage converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRSM Non-repetitive reverse blocking voltage 60 V VRRM Repetitive reverse blocking voltage 60 V IF(AV) Average Rectified Forward Current 30*2 A IFSM Forward surge current t = 10 ms; (50 Hz), sine; T = 45℃ 450 A Ptot Total power dissipation 175 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.85 ℃ /W |
类似零件编号 - DSA60C60PB |
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类似说明 - DSA60C60PB |
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