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M750000007 数据表(PDF) 81 Page - SPANSION |
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M750000007 数据表(HTML) 81 Page - SPANSION |
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81 / 129 page ![]() February 6, 2004 Am75PDL191BHHa/Am75PDL193BHHa 79 ADV ANCE I N FO RMAT I O N ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. All values are subject to change. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. All values are subject to change. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables Table 16 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 108 sec Word Program Time 6 210 µs Excludes system level overhead (Note 5) Accelerated Word Program Time 4 120 µs Chip Program Time (Note 3) 50 200 sec Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 11 14 pF C OUT Output Capacitance V OUT = 0 12 16 pF C IN2 Control Pin Capacitance V IN = 0 14 16 pF C IN3 WP#/ACC Pin Capacitance V IN = 0 17 20 pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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