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DS312W 数据表(PDF) 2 Page - UN Semiconducctor INC |
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DS312W 数据表(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 DS32W~DS320W Surface Mount Schottky Barrier Rectifier Electrical Characteristics Curves Fig. 2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve Fig. 4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig. 6 Typical Transient Thermal Impedance 0.5 1.0 1.5 2.0 2.5 3.0 0 0 25 50 75 100 125 150 3.5 Case Temperature (°C) Single phase half-wave 60Hz resis tive or inductive load 20 40 60 80 0 T =25 J ° C Percent of Rated Peak Reverse Voltage(%) 100 100 101 102 103 104 T =75 J ° C DS32W/DS34W DS36W-DS320W T =100 J ° C 0.1 0 0.4 1.4 Instaneous Forward Voltage (V) 1.0 10 0.6 0.2 0.8 1.0 1.2 1.8 1.6 20 DS32W/DS34W DS36W/DS38W DS310W/DS312W DS315W/DS320W 10 0.1 Reverse Voltage (V) 10 100 200 500 20 50 100 1 DS32W/DS34W DS36W-DS320W T =25 J ° C 10 100 Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 1 20 40 60 0 80 100 0.01 100 1 10 100 t, Pulse Duration(sec) 0.1 1 10 200 |
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