DS05-20850-4E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

8M (1M

× 8) BIT

s

s

s

s GENERAL DESCRIPTION

The MBM29F080A is a 8 M-bit, 5.0 V-Only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes

for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F080A offers access times between 55 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

command register using standard microprocessor write timings. Register contents serve as input to an internal

state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses

and data needed for the programming and erase operations. Reading data out of the device is similar to reading

from 12.0 V Flash or EPROM devices.

The MBM29F080A is programmed by executing the program command sequence. This will invoke the Embedded

Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished

by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal

algorithm that automatically preprograms the array if it is not already programmed before executing the erase

operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

(Continued)

s

s

s

s PRODUCT LINE UP

Part No.

MBM29F080A

Ordering Part No.

-55

—

—

—

-70

-90

Max Address Access Time (ns)

55

70

90

Max CE Access Time (ns)

55

70

90

Max OE Access Time (ns)

30

30

40