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P2000SC 数据表(PDF) 2 Page - UN Semiconducctor INC

部件名 P2000SC
功能描述  Thyristor Surge Suppressors (TSS)
PDF  6 Pages
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制造商  UNSEMI [UN Semiconducctor INC]
网页  http://www.unsemi.com.tw
标志 UNSEMI - UN Semiconducctor INC

P2000SC 数据表(HTML) 2 Page - UN Semiconducctor INC

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Revision March 1,2022
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Thyristor Surge Suppressors (TSS)
DO-214AA(SMB) @10/700μS,6KV
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
P0080SC - P8000SC Series
Electrical Characteristics
2/5
P0080SC
P0300SC
P0640SC
P0720SC
P0900SC
P1100SC
P1300SC
P1500SC
P1800SC
P2000SC
P2300SC
P2600SC
P3100SC
P3500SC
P3800SC
P4200SC
P4500SC
P5000SC
P8000SC
6
25
58
65
75
90
120
140
170
180
190
220
275
320
360
400
420
440
800
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
25
40
77
88
98
130
160
180
220
220
260
300
350
400
460
520
540
600
900
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
1350
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
50
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
55
100
100
100
100
90
90
90
85
85
85
80
80
65
40
30
30
30
30
40
Part Number
P008C
P03C
P06C
P07C
P09C
P11C
P13C
P15C
P18C
P20C
P23C
P26C
P31C
P35C
P38C
P42C
P45C
P50C
P80C
Marking
pF Typ.
VDRM
@
IDRM=5μA
IDRM
VS
@100V/μS
IS
VT
@IT=2.2A
IT
CO
@1MHz
IH
V Min.
V Max.
V Max.
A Max.
μA Max.
mA Max.
mA Min.
Surge Ratings
Series
2/10μS¹
2/10μS²
A min
8/20μS¹
1.2/50μS²
A min
10/160μS¹
10/160μS²
A min
500
400
200
10/560μS¹
10/560μS²
A min
150
10/1000μS¹
10/1000μS²
A min
100
5/320μS¹
ITSM
50/60HZ
10/700μS²
di/dt
A min
A min
Amps/µs
max
150
50
500
C
Notes:
1. Current waveform in µs
2. Voltage waveform in µs
Notes:
- Absolute maximum ratings measured at TA= 25ºC (unless otherwise noted).
- Devices are bi-directional.
- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.
- IPP ratings applicable over temperature range of -40ºC to +85ºC
- The device must initially be in thermal equilibrium with -40°C < TJ < +150°C



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