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AM29SL400DB120WAF 数据表(PDF) 31 Page - Advanced Micro Devices

部件名 AM29SL400DB120WAF
功能描述  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  41 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29SL400DB120WAF 数据表(HTML) 31 Page - Advanced Micro Devices

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April 13, 2005 Rev. A Amend. +1
Am29SL400D
29
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance, on page 37 for more information.
Parameter
Speed Options
JEDEC
Std.
Description
90
100
120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
455060
ns
tDVWH
tDS
Data Setup Time
Min
45
50
60
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
45
50
60
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1 Programming Operation (Notes 1, 2)
Byte
Typ
5
µs
Word
Typ
7
tWHWH2
tWHWH2 Sector Erase Operation (Notes 1, 2)
Typ
0.7
sec
tVCS
VCC Setup Time
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
200
ns



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