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S3DF 数据表(PDF) 2 Page - UN Semiconducctor INC |
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S3DF 数据表(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 S3AF~S3MF Surface Mount General Purpose Silicon Rectifiers Electrical Characteristics Curves Fig. 2 Typical Instaneous Reverse Characteristics Fig.1 Forward Current Derating Curve Fig. 4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 25 50 75 100 125 150 175 Case Temperature (°C) 1.0 2.0 3.0 0 0 Single phase half-wave 60 Hz resistive or inductive load 200 400 600 800 0 0.01 0.1 1.0 10 Instaneous Reverse Voltage (V) 100 T =25 J ° C T =75 J ° C T =125 J ° C T =150 J ° C 0.1 0.6 1.0 1.2 1.6 Instaneous Forward Voltage (V) 0.4 10 1.0 1.4 0.8 1.8 T =25 J ° C 1.0 10 100 0.1 1 10 100 Reverse Voltage (V) T =25 J ° C 20 40 60 80 100 120 0 10 100 Number of Cycles 1 8.3 ms Single Half Sine Wave (JEDEC Method) |
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