High Dynamic Range

Low Noise GaAs FET

Page 2 of 2

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

CFB0303

August 2006 - Rev 03-Aug-06

Absolute Maximum Ratings

Parameter

Symbol

Rating

Drain-Source Voltage

Vds

+8V

Gate-Source Voltage

Vgs

-5V

Drain Current

Ids

Idss

Pt

750 mW

Channel Temperature

Tch

175°C

Storage Temperature

Tstg

-65°C to +150°C

Frequency

Fmin

1

Gamma Opt

(GHz)

(dB)

Mag

Ang

Rn/50

0.8

0.4

0.6

27

0.19

1.0

0.4

0.6

29

0.17

1.2

0.4

0.6

32

0.18

1.4

0.4

0.6

35

0.18

1.6

0.4

0.5

38

0.17

1.8

0.4

0.5

41

0.16

2.0

0.5

0.5

45

0.15

2.2

0.5

0.5

49

0.15

2.4

0.5

0.5

54

0.14

2.6

0.5

0.5

60

0.13

Note: 1. Fmin values reflect the circuit losses in the test fixture when

matched to optimum noise figure.

Notes