3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

Parameter

Condition

Min

Typ

Max

Units

Frequency Range

2.4

2.5

GHz

P-1dB

30

30.5

dBm

31

31.5

dBm

Efficiency (PAE)

@ Saturation

48

%

Gain

18

20

dB

Harmonics

2nd @ Pout = +30 dBm

-35

-30

dBc

3rd @ Pout = +30 dBm

-40

-35

dBc

Noise Figure

5.0

dB

Return Loss

10

dB

Negative Supply Current (-Ig)

0.5

1.0

mA

Positive Supply Current (Id)

@ P-1dB

675

mA

Electrical Characteristics

The following specifications are guaranteed at room temperature with drain voltage (+Vd) = 4.8 V @ 2.45 GHz in Celeritek test fixture.

CMM2321

Features

t 48% Power Added Efficiency

t 31.5 dBm Output Power

t Low Distortion

t Low Cost SO-8 Surface Mount Package

Applications

t Wireless Datacom

t Wireless Bar Code Scanners

t Inter-Building Campus Networks

Description

The CMM2321 is a power amplifier intended for use

in 2.4 GHz ISM band applications such as wireless datacom

equipment, wireless bar code scanners and inter-building cam-

pus networks. This flexible amplifier can be biased to support

the requirements of frequency hopping or direct sequence sys-

tems. The CMM2321 is packaged in a low-cost, space effi-

cient SO-8 power package that gives excellent electrical sta-

bility and thermal handling performance with a RΘ of less

than 18° C/W. The part is designed to require minimal exter-

nal circuitry for bias matching, simplifying design and keep-

ing board space and cost to a minimum.

2.4 to 2.5 GHz

1 Watt Power Amplifier

Recommended Operating Conditions

Parameter

Typ

Units

Parameter

Typ

Units

Drain Voltage (+Vd)

4.5 to 5.1

Volts

Operating Temperature (PC Board)

-30 to +80

°C

Preliminary Product Information

April 1997

(1 of 4)

Back plane is ground and

must be soldered to thermally

conductive ground plane.

Vg2 4

RF IN 1

Vg1 3

GND 2

6 RF OUT/Vd2

5 RF OUT/Vd2

8 N/C

7 Vd1

Functional Block Diagram

Absolute Maximum Ratings

Parameter

Rating

Parameter

Rating

Parameter

Rating

Drain Voltage (+Vd)

+9.0 V*

Power Dissipation

5 W

Operating Temperature

-40°C to +100°C

Drain Current (Id)

1.8 A

Thermal Resistance

18°C/W

Channel Temperature

175°C

RF Input Power

+15 dBm*

Storage Temperature

-65°C to +150°C

Soldering Temperature

260°C for 5 Sec.

DC Gate Voltage (-Vg)

-4.0 V*

* Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd + |-Vg|) not to exceed the minimum breakdown voltage (Vbr) of +18V.