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GAP3SLT33 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 GAP3SLT33
功能描述  Schottky Barrier Rectifier
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

GAP3SLT33 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  GAP3SLT33 Datasheet HTML 1Page - Inchange Semiconductor Company Limited GAP3SLT33 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Schottky Barrier Rectifier
GAP3SLT33
www.iscsemi.com
1
FEATURES
·Multi-layer Metal -Silicon Potential Structure
·Low Leakage Current
·High Current Capability, High Efficiency
·High Junction Temperature Capability
MECHANICAL CHARACTERISTICS
·Low Voltage High Frequency Switching Power Supply
·Low Voltage High Frequency Invers Circuit
·Low Voltage Continued Circuit and Protection Circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRMS
Peak Repetitive Reverse Voltage
RMS Voltage
3300
V
IF
Continuous forward current
0.3
A
IF(RMS)
RMS forward current
0.35
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
2
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.69
℃
/W


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