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ISCF8025 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8025 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISCF8025 eq SCTWA70N120G2V SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Increased System Switching Frequency · Higher System Efficiency · Increased Power Density APPLICATIONS · Switching mode power supply · DC-DC converters · Industrial motor control Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source Opetation Voltage -10/+22 V VGS Gate-Source Opetation Voltage (recommended operating values) -5/+18 V ID Drain Current-Continuous@Tc=25℃ 91 A Drain Current-Continuous@Tc=100℃ 69 A IDM Drain Current-Single Pluse 274 A PD Total Dissipation @TC=25℃ 547 W TJ Max. Operating Junction Temperature -55~200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.32 ℃ /W |
类似零件编号 - ISCF8025 |
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类似说明 - ISCF8025 |
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