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IRF820ASPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF820ASPBF
功能描述  HEXFET Power MOSFET
PDF  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF820ASPBF 数据表(HTML) 1 Page - International Rectifier

  IRF820ASPBF Datasheet HTML 1Page - International Rectifier IRF820ASPBF Datasheet HTML 2Page - International Rectifier IRF820ASPBF Datasheet HTML 3Page - International Rectifier IRF820ASPBF Datasheet HTML 4Page - International Rectifier IRF820ASPBF Datasheet HTML 5Page - International Rectifier IRF820ASPBF Datasheet HTML 6Page - International Rectifier IRF820ASPBF Datasheet HTML 7Page - International Rectifier IRF820ASPBF Datasheet HTML 8Page - International Rectifier IRF820ASPBF Datasheet HTML 9Page - International Rectifier Next Button
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www.irf.com
1
7/20/04
IRF820ASPbF
IRF820ALPbF
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
VDSS
RDS(on) max
ID
500V
3.0
Ω
2.5A
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
†
2.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
†
1.6
A
IDM
Pulsed Drain Current
†
10
PD @TC = 25°C
Power Dissipation
50
W
Linear Derating Factor
0.4
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
Ġ
3.4
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
PD - 95533
Notes  through … are on page 8
D2Pak
IRF820AS
TO-262
IRF820AL


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