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IRLR8103VPBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRLR8103VPBF
功能描述  N-Channel Application-Specific MOSFETs
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRLR8103VPBF 数据表(HTML) 2 Page - International Rectifier

  IRLR8103VPBF Datasheet HTML 1Page - International Rectifier IRLR8103VPBF Datasheet HTML 2Page - International Rectifier IRLR8103VPBF Datasheet HTML 3Page - International Rectifier IRLR8103VPBF Datasheet HTML 4Page - International Rectifier IRLR8103VPBF Datasheet HTML 5Page - International Rectifier IRLR8103VPBF Datasheet HTML 6Page - International Rectifier IRLR8103VPBF Datasheet HTML 7Page - International Rectifier IRLR8103VPBF Datasheet HTML 8Page - International Rectifier  
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IRLR8103VPbF
Notes:

Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 400 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
„
Typ = measured - Q
oss
… Typical values of RDS(on) measured at V
GS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Drain-to-Source Breakdown Voltage
BVDSS
30
–––
–––
V
Static Drain-Source
RDS(on)
–––
6.9
9.0
On-Resistance
–––
7.9
10.5
Gate Threshold Voltage
VGS(th)
1.0
–––
3.0
V
Drain-to-Source Leakage Current
IDSS
–––
–––
50
µA
–––
–––
20
–––
–––
100
Gate-Source Leakage Current
IGSS
–––
––– ±100
nA
Total Gate Charge, Control FET
QG
–––
27
–––
Total Gate Charge, Synch FET
QG
–––
23
–––
Pre-Vth Gate-Source Charge
QGS1
–––
4.7
–––
Post-Vth Gate-Source Charge
QGS2
–––
2.0
–––
Gate to Drain Charge
QGD
–––
9.7
–––
Switch Charge (Qgs2 + Qgd)QSW
–––
12
–––
Output Charge
QOSS
–––
29
–––
Gate Resistance
RG
0.8
–––
3.1
Turn-On Delay Time
td(on)
–––
10
–––
Rise Time
tr
–––
9
–––
Turn-Off Delay Time
td(off)
–––
24
–––
Fall Time
tf
–––
18
–––
Input Capacitance
Ciss
––– 2672 –––
Output Capacitance
Coss
––– 1064 –––
Reverse Transfer Capacitance
Crss
–––
109
–––
Source-Drain Rating & Characteristics
Parameter
Symbol Min Typ Max Units
Diode Forward Voltage
VSD
–––
0.9
1.3
V
Reverse Recovery Charge
f
Qrr
–––
103
–––
nC
Reverse Recovery Charge
Qrr(s)
–––
96
–––
nC
(with Parallel Schottky)
f
VGS = 5V, ID = 15A, VDS = 16V
VDS = 24V, VGS = 0
VDD = 16V
VDS = 24V, VGS = 0, TJ = 100°C
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 15A
d
Conditions
di/dt = 700A/µs , (with 10BQ040)
VDS= 16V, VGS = 0V, IF = 15A
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
IS = 15A
d, VGS = 0V
VGS = 4.5V, ID = 15A
d
nC
m
µA
VDS = 16V, VGS = 0
VDS = 16V, ID = 15A
VGS = 5V, VDS < 100mV
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ± 20V
ns
pF VGS = 16V, VGS=0
ID = 15A
VGS = 5.0V
Clamped Inductive Load



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