2N5682 datasheet(1/2 Pages) MICROSEMI

部件名	2N5682

功能描述	NPN POWER TRANSISTOR SILICON AMPLIFIER

PDF	2 Pages

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

标志

1 / 2 page

TECHNICAL DATA

NPN POWER TRANSISTOR SILICON AMPLIFIER

Qualified per MIL-PRF-19500/583

Devices

Qualified Level

2N5681

2N5682

JAN

JANTX

JANTXV

MAXIMUM RATINGS (TA = 25°°C unless otherwise noted)

Ratings

Symbol

2N5681

2N5682

Units

Collector-Emitter Voltage

VCEO

100

120

Vdc

Collector-Base Voltage

VCBO

100

120

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current

IC

1.0

Adc

Base Current

IB

0.5

Adc

Total Power Dissipation

@ TA = +25

0C(1)

@ TC = +25

0C(2)

PT

1.0

10

1.0

10

W

Operating & Storage Temperature Range

Top, Tstg

-65 to +200

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

17.5

0C

1) Derate linearly 5.7 mW/

0C for TA > +250C

2) Derate linearly 57 mW/

0C for TC > +250C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

2N5681

2N5682

V(BR)CEO

100

120

Vdc

Emitter-Base Cutoff Current

VEB = 4.0 Vdc

IEBO

1.0

µAdc

Collector-Emitter Cutoff Current

VCE = 70 Vdc

2N5681

VCE = 80 Vdc

2N5682

ICEO

10

µAdc

Collector-Emitter Cutoff Current

VBE = 1.5 Vdc

VCE = 100 Vdc

2N5681

VCE = 120 Vdc

2N5682

ICEX

100

nAdc

Collector-Baser Cutoff Current

VCE = 100 Vdc

2N5681

VCE = 120 Vdc

2N5682

ICBO

100

nAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

TO-39*

(TO-205AD)

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