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PBYL1025 数据表(PDF) 1 Page - NXP Semiconductors |
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PBYL1025 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYL1025 series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Low thermal resistance V F ≤ 0.4 V GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Schottky rectifier diodes intended PIN DESCRIPTION for use as output rectifiers in low voltage, high frequency switched 1 cathode mode power supplies. 2 anode The PBYL1025 series is supplied in the SOD59 (TO220AC) tab cathode conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYL10 20 25 V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 119 ˚C - 20 25 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 132 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 132 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 135 A current t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a 12 1 tab 2 March 1998 1 Rev 1.000 |
类似零件编号 - PBYL1025 |
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类似说明 - PBYL1025 |
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