PBYR10100X datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR10100X series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-mb = f(tp).

0123456789

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

a = 1.57

1.9

2.2

2.8

142

134

126

118

110

100

0.1

0.01

IR / mA

VR/ V

PBYR10100

75 C

100 C

125 C

150 C

Tj = 50 C

02468

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

D = 1.0

0.5

0.2

0.1

142

134

126

118

110

D = tp/T

102

100

10000

1000

100

Cd/ pF

VR/ V

PBYR20100CT

012

VF / V

IF / A

0.5

1.5

Tj = 25 C

Tj = 125 C

Typ

Max

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYR10100

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

November 1999

Rev 1.000

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